Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT: Fid-Bau Portal

Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Vallo, M. / Lalinsky, T. / Dobrocka, E. / Vanko, G. / Vincze, A. / Ryger, I.

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Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Vallo, M. / Lalinsky, T. / Dobrocka, E. / Vanko, G. / Vincze, A. / Ryger, I.

Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Vallo, M. / Lalinsky, T. / Dobrocka, E. / Vanko, G. / Vincze, A. / Ryger, I.

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Check availability in my library

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Document information

Title:

Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Contributors:

Vallo, M. (author) / Lalinsky, T. (author) / Dobrocka, E. (author) / Vanko, G. (author) / Vincze, A. (author) / Ryger, I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 267 ; 159-163

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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