Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy: Fid-Bau Portal

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Hupfer, T. / Hens, P. / Kaiser, M. / Jokubavicius, V. / Syvajarvi, M. / Wellmann, P.

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Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Hupfer, T. / Hens, P. / Kaiser, M. / Jokubavicius, V. / Syvajarvi, M. / Wellmann, P.

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Hupfer, T. / Hens, P. / Kaiser, M. / Jokubavicius, V. / Syvajarvi, M. / Wellmann, P.

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Titel:

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Beteiligte:

Hupfer, T. (Autor:in) / Hens, P. (Autor:in) / Kaiser, M. (Autor:in) / Jokubavicius, V. (Autor:in) / Syvajarvi, M. (Autor:in) / Wellmann, P. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 52-55

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Furusho, T. / Miyanagi, T. / Okui, Y. et al. | British Library Online Contents | 2002

Growth and Characterization of Silicon Carbide by Sublimation

Wang, Y. / Wan, L. / Liu, X.P. et al. | British Library Online Contents | 2008

Growth and Characterization of Silicon Carbide by Sublimation

Wang, Y. / Wan, L. / Liu, X.P. et al. | British Library Online Contents | 2008

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

Davydov, D. V. / Lebedev, A. A. / Tregubova, A. S. et al. | British Library Online Contents | 2000

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy

Dudley, M. / Zhang, N. / Zhang, Y. et al. | British Library Online Contents | 2010

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