Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy: Fid-Bau Portal

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Hupfer, T. / Hens, P. / Kaiser, M. / Jokubavicius, V. / Syvajarvi, M. / Wellmann, P.

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Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Hupfer, T. / Hens, P. / Kaiser, M. / Jokubavicius, V. / Syvajarvi, M. / Wellmann, P.

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Hupfer, T. / Hens, P. / Kaiser, M. / Jokubavicius, V. / Syvajarvi, M. / Wellmann, P.

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Title:

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Contributors:

Hupfer, T. (author) / Hens, P. (author) / Kaiser, M. (author) / Jokubavicius, V. (author) / Syvajarvi, M. (author) / Wellmann, P. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 52-55

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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