Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Fast Growth Rate Epitaxy by Chloride Precursors
Fast Growth Rate Epitaxy by Chloride Precursors
Fast Growth Rate Epitaxy by Chloride Precursors
La Via, F. (Autor:in) / Camarda, M. (Autor:in) / Canino, A. (Autor:in) / Severino, A. (Autor:in) / La Magna, A. (Autor:in) / Mauceri, M. (Autor:in) / Vecchio, C. (Autor:in) / Crippa, D. (Autor:in) / Lebedev, A.A. / Davydov, S.Y.
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC Wafers
British Library Online Contents | 2014
|High Growth Rate of -SIC by Sublimation Epitaxy
British Library Online Contents | 1998
|Very High Growth Rate Epitaxy Processes with Chlorine Addition
British Library Online Contents | 2007
|High Growth Rate Epitaxy of Thick 4H-SiC Layers
British Library Online Contents | 2000
|Theoretical evaluation of film growth rate during atomic layer epitaxy
British Library Online Contents | 2000
|