Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events: Fid-Bau Portal

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

Steiner, B. / Bayne, S.B. / Veliadis, V. / Ha, H.C. / Urciuoli, D. / El Hinnawy, N. / Borodulin, P. / Scozzie, C.

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Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

Steiner, B. / Bayne, S.B. / Veliadis, V. / Ha, H.C. / Urciuoli, D. / El Hinnawy, N. / Borodulin, P. / Scozzie, C.

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

Steiner, B. / Bayne, S.B. / Veliadis, V. / Ha, H.C. / Urciuoli, D. / El Hinnawy, N. / Borodulin, P. / Scozzie, C.

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Titel:

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

Beteiligte:

Steiner, B. (Autor:in) / Bayne, S.B. (Autor:in) / Veliadis, V. (Autor:in) / Ha, H.C. (Autor:in) / Urciuoli, D. (Autor:in) / El Hinnawy, N. (Autor:in) / Borodulin, P. (Autor:in) / Scozzie, C. (Autor:in) / Lebedev, A.A. / Davydov, S.Y.

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 921-924

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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