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Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
Steiner, B. (author) / Bayne, S.B. (author) / Veliadis, V. (author) / Ha, H.C. (author) / Urciuoli, D. (author) / El Hinnawy, N. (author) / Borodulin, P. (author) / Scozzie, C. (author) / Lebedev, A.A. / Davydov, S.Y.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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