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On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
Nawaz, M. (Autor:in) / Chimento, F. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
01.01.2013
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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