Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Balatti, S. (Autor:in) / Larentis, S. (Autor:in) / Gilmer, D. C. (Autor:in) / Ielmini, D. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 1474-1478
01.01.2013
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A Light-Controlled Resistive Switching Memory
| British Library Online Contents | 2012
Bipolar resistive switching memory behaviors of the micro-size composite particles
| British Library Online Contents | 2017
Bipolar resistive switching memory behaviors of the micro-size composite particles
| British Library Online Contents | 2017
A study of copper oxide based resistive switching memory by conductive atom force microscope
| British Library Online Contents | 2013