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A study of copper oxide based resistive switching memory by conductive atom force microscope
A study of copper oxide based resistive switching memory by conductive atom force microscope
A study of copper oxide based resistive switching memory by conductive atom force microscope
APPLIED SURFACE SCIENCE ; 271 ; 407-411
01.01.2013
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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