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Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Balatti, S. (author) / Larentis, S. (author) / Gilmer, D. C. (author) / Ielmini, D. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 1474-1478
2013-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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