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    A study of copper oxide based resistive switching memory by conductive atom force microscope

    New search for: Zhou, Q.
    New search for: Lu, Q.
    New search for: Zhang, X.
    New search for: Song, Y.
    New search for: Lin, Y. Y.
    New search for: Wu, X.

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    A study of copper oxide based resistive switching memory by conductive atom force microscope

    New search for: Zhou, Q.
    New search for: Lu, Q.
    New search for: Zhang, X.
    New search for: Song, Y.
    New search for: Lin, Y. Y.
    New search for: Wu, X.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    A study of copper oxide based resistive switching memory by conductive atom force microscope

    New search for: Zhou, Q.
    New search for: Lu, Q.
    New search for: Zhang, X.
    New search for: Song, Y.
    New search for: Lin, Y. Y.
    New search for: Wu, X.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    A study of copper oxide based resistive switching memory by conductive atom force microscope

    Contributors:

    Zhou, Q. (author) / Lu, Q. (author) / Zhang, X. (author) / Song, Y. (author) / Lin, Y. Y. (author) / Wu, X. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 271 ; 407-411

    Publication date:

    2013-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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