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Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation
Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation
Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation
Charmi, M. (Autor:in) / Orouji, A.A. (Autor:in) / Mashayekhi, H.R. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 311-317
01.01.2013
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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