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Influence of deposition pressure on p-type a-Si:H window layer doped by trimethylboron for a-Si:H superstrate solar cell in plasma enhanced chemical vapor deposition
Influence of deposition pressure on p-type a-Si:H window layer doped by trimethylboron for a-Si:H superstrate solar cell in plasma enhanced chemical vapor deposition
Influence of deposition pressure on p-type a-Si:H window layer doped by trimethylboron for a-Si:H superstrate solar cell in plasma enhanced chemical vapor deposition
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 363-368
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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