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Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells
Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells
Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells
Sharma, Mansi (Autor:in) / Juneja, Sucheta (Autor:in) / Sudhakar, S. (Autor:in) / Chaudhary, Deepika (Autor:in) / Kumar, Sushil (Autor:in)
Materials science in semiconductor processing ; 43 ; 41-46
01.01.2016
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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