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Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors
Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors
Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors
Choi, M.H. (Autor:in) / Ma, T.Y. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 369-373
01.01.2013
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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