Effect of GaN template thickness and morphology on Al"xGa"1"-"xN (0

Halidou, I. / Toure, A. / Fouzri, A. et al. | British Library Online Contents | 2013

MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Huang, G. S. / Tang, X. H. / Zhang, B. L. | British Library Online Contents | 2003

Formation of AlxGa1-xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

Takeda, J. / Akabori, M. / Motohisa, J. et al. | British Library Online Contents | 2002

Selective area MOVPE growth for 1.55 mum laser diodes with vertically tapered thickness waveguide

Kim, H.-S. / Oh, D. K. / Park, M.-H. et al. | British Library Online Contents | 2001

Monte Carlo growth and in situ characterisation for AlxGa1−xAs heteroepitaxy

Fazouan, N. / Atmani, E. / Djafari-Rouhani, M. et al. | British Library Online Contents | 2005