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Control of the interfacial reaction in HfO"2 on Si-passivated GaAs
Control of the interfacial reaction in HfO"2 on Si-passivated GaAs
Control of the interfacial reaction in HfO"2 on Si-passivated GaAs
Park, S. H. (Autor:in) / Kang, Y. S. (Autor:in) / Chae, J. (Autor:in) / Kim, H. J. (Autor:in) / Cho, M. H. (Autor:in) / Ko, D. H. (Autor:in) / Byun, Y. C. (Autor:in) / Kim, H. (Autor:in) / Cho, S. W. (Autor:in) / Kim, C. Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 283 ; 375-381
01.01.2013
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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