A platform for research: civil engineering, architecture and urbanism
Control of the interfacial reaction in HfO"2 on Si-passivated GaAs
Control of the interfacial reaction in HfO"2 on Si-passivated GaAs
Control of the interfacial reaction in HfO"2 on Si-passivated GaAs
Park, S. H. (author) / Kang, Y. S. (author) / Chae, J. (author) / Kim, H. J. (author) / Cho, M. H. (author) / Ko, D. H. (author) / Byun, Y. C. (author) / Kim, H. (author) / Cho, S. W. (author) / Kim, C. Y. (author)
APPLIED SURFACE SCIENCE ; 283 ; 375-381
2013-01-01
7 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Studies on sulphur-passivated GaAs/SiN interfaces
British Library Online Contents | 1994
|Temperature studies of sulfur passivated GaAs(100) contacts
British Library Online Contents | 1997
|Surface structures of GaAs passivated by chalcogen atoms
British Library Online Contents | 1994
|Reactivation Kinetics Of Lithium-Passivated Acceptors In GaAs
British Library Online Contents | 1995
|Residual Stress in Si~3N~4 Passivated GaAs Wafers
British Library Online Contents | 1997
|