Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Son, J. G. (Autor:in) / Son, M. (Autor:in) / Moon, K. J. (Autor:in) / Lee, B. H. (Autor:in) / Myoung, J. M. (Autor:in) / Strano, M. S. (Autor:in) / Ham, M. H. (Autor:in) / Ross, C. A. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 4682-4682
01.01.2013
1 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2013
|Comparative study of nanoribbon field effect transistors based on silicene and graphene
British Library Online Contents | 2019
|Analytical Theory of Graphene Nanoribbon Transistors
IEEE | 2008
|British Library Online Contents | 2012
|British Library Online Contents | 2014
|