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Analytical Theory of Graphene Nanoribbon Transistors

Zhao, Pei / Choudhury, Mihir / Mohanram, Kartik / Guo, Jing

Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.

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Analytical Theory of Graphene Nanoribbon Transistors

Zhao, Pei / Choudhury, Mihir / Mohanram, Kartik / Guo, Jing

Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.

Analytical Theory of Graphene Nanoribbon Transistors

Zhao, Pei / Choudhury, Mihir / Mohanram, Kartik / Guo, Jing

Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.

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Titel:

Analytical Theory of Graphene Nanoribbon Transistors

Beteiligte:

Zhao, Pei (Autor:in) / Choudhury, Mihir (Autor:in) / Mohanram, Kartik (Autor:in) / Guo, Jing (Autor:in)

Erschienen in:

2008 IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems ; 3-6

Erscheinungsdatum:

01.09.2008

Format / Umfang:

193158 byte

ISBN:

978-0-7695-3379-7

DOI:

https://doi.org/10.1109/NDCS.2008.22

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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