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Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Son, J. G. (author) / Son, M. (author) / Moon, K. J. (author) / Lee, B. H. (author) / Myoung, J. M. (author) / Strano, M. S. (author) / Ham, M. H. (author) / Ross, C. A. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 4682-4682
2013-01-01
1 pages
Article (Journal)
English
DDC:
620.11
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