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Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET
Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET
Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET
Arefinia, Z. (Autor:in) / Cheong, K. Y. / Paskaleva, A.
01.01.2013
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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