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    Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

    New search for: Arefinia, Z.
    New search for: Cheong, K. Y.
    New search for: Paskaleva, A.

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    Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

    New search for: Arefinia, Z.
    New search for: Cheong, K. Y.
    New search for: Paskaleva, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

    New search for: Arefinia, Z.
    New search for: Cheong, K. Y.
    New search for: Paskaleva, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

    Contributors:

    Arefinia, Z. (author) / Cheong, K. Y. / Paskaleva, A.

    Published in:

    Advanced Oxides for Electronics ; 1240-1247

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16

    Publication date:

    2013-01-01

    Size:

    8 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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