Work-Function-Tuned Reduced Graphene Oxide via Direct Surface Functionalization as Source/Drain Electrodes in Bottom-Contact Organic Transistors: Fid-Bau Portal

Work-Function-Tuned Reduced Graphene Oxide via Direct Surface Functionalization as Source/Drain Electrodes in Bottom-Contact Organic Transistors

Kang, B. / Lim, S. / Lee, W. H. / Jo, S. B. / Cho, K.

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Work-Function-Tuned Reduced Graphene Oxide via Direct Surface Functionalization as Source/Drain Electrodes in Bottom-Contact Organic Transistors

Kang, B. / Lim, S. / Lee, W. H. / Jo, S. B. / Cho, K.

Work-Function-Tuned Reduced Graphene Oxide via Direct Surface Functionalization as Source/Drain Electrodes in Bottom-Contact Organic Transistors

Kang, B. / Lim, S. / Lee, W. H. / Jo, S. B. / Cho, K.

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Titel:

Work-Function-Tuned Reduced Graphene Oxide via Direct Surface Functionalization as Source/Drain Electrodes in Bottom-Contact Organic Transistors

Beteiligte:

Kang, B. (Autor:in) / Lim, S. (Autor:in) / Lee, W. H. (Autor:in) / Jo, S. B. (Autor:in) / Cho, K. (Autor:in)

Erschienen in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 5856-5862

Erscheinungsdatum:

01.01.2013

Format / Umfang:

7 pages

ISSN:

0935-9648

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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