Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
Noll, S. (Autor:in) / Rambach, M. (Autor:in) / Grieb, M. (Autor:in) / Scholten, D. (Autor:in) / Bauer, A.J. (Autor:in) / Frey, L. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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