:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019): Fid-Bau Portal

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:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Chen, Changdong / Yang, Bo‐Ru / Li, Gongtan / Zhou, Hang / Huang, Bolong / Wu, Qian / Zhan, Runze / Noh, Yong‐Young / Minari, Takeo / Zhang, Shengdong / ... [mehr]

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:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Chen, Changdong / Yang, Bo‐Ru / Li, Gongtan / Zhou, Hang / Huang, Bolong / Wu, Qian / Zhan, Runze / Noh, Yong‐Young / Minari, Takeo / Zhang, Shengdong / ... [mehr]

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Chen, Changdong / Yang, Bo‐Ru / Li, Gongtan / Zhou, Hang / Huang, Bolong / Wu, Qian / Zhan, Runze / Noh, Yong‐Young / Minari, Takeo / Zhang, Shengdong / ... [mehr]

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Titel:

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Beteiligte:

Chen, Changdong (Autor:in) / Yang, Bo‐Ru (Autor:in) / Li, Gongtan (Autor:in) / Zhou, Hang (Autor:in) / Huang, Bolong (Autor:in) / Wu, Qian (Autor:in) / Zhan, Runze (Autor:in) / Noh, Yong‐Young (Autor:in) / Minari, Takeo (Autor:in) / Zhang, Shengdong (Autor:in)

Erschienen in:

Advanced Science ; 6

Erscheinungsdatum:

01.04.2019

Format / Umfang:

1 pages

ISSN:

DOI:

https://doi.org/10.1002/advs.201970040

Medientyp:

Aufsatz (Zeitschrift)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

carrier mobility , four‐probe measurement , surface potential scanning , doping , thin‐film transistors

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