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Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
Noll, S. (author) / Rambach, M. (author) / Grieb, M. (author) / Scholten, D. (author) / Bauer, A.J. (author) / Frey, L. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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