Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates

Zhao, L. / Yu, T. / Wu, J. et al. | British Library Online Contents | 2010

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Hiramatsu, K. / Matsushima, H. / Shibata, T. et al. | British Library Online Contents | 1999

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

Ahn, H. S. / Kim, K. H. / Yang, M. et al. | British Library Online Contents | 2005

GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties

Kim, H.-M. / Cho, Y.-H. / Kang, T. W. | British Library Online Contents | 2003

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J. / Martin, D. / Buhlmann, H. J. et al. | British Library Online Contents | 2004