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Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates
Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates
Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates
APPLIED SURFACE SCIENCE ; 256 ; 2236-2240
01.01.2010
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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