Atomistic Aspects of Sige Nanostructure Formation by Molecular-Beam Epitaxy

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Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

Ogawa, K. / Ofuchi, H. / Maki, H. et al. | British Library Online Contents | 2003

On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers

Kowalski, G. / Frymark, I. / Krotkus, A. et al. | British Library Online Contents | 2002

Characterization of low temperature GaAs grown by molecular beam epitaxy

Lee, W. C. / Hsu, T. M. / Chyi, J.-I. et al. | British Library Online Contents | 1996

Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy

Zhang, Linen / Liu, Chao / Yang, Qiumin et al. | British Library Online Contents | 2015