Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

Carvalho, A. T. G. / De Oliveira, A. G. / Alves, E. S. et al. | British Library Online Contents | 1995

On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers

Kowalski, G. / Frymark, I. / Krotkus, A. et al. | British Library Online Contents | 2002

Characterization of low temperature GaAs grown by molecular beam epitaxy

Lee, W. C. / Hsu, T. M. / Chyi, J.-I. et al. | British Library Online Contents | 1996

Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

Kajikawa, Y. / Kobayashi, N. / Terasaki, H. | British Library Online Contents | 2006

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | British Library Online Contents | 2000