Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy: Fid-Bau Portal

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Del Rio-De Santiago, A. / Mendez-Garcia, V. H. / Martinez-Velis, I. / Casallas-Moreno, Y. L. / Lopez-Luna, E. / Yu Gorbatchev, A. / Lopez-Lopez, M. / Cruz-Hernandez, E.

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Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Del Rio-De Santiago, A. / Mendez-Garcia, V. H. / Martinez-Velis, I. / Casallas-Moreno, Y. L. / Lopez-Luna, E. / Yu Gorbatchev, A. / Lopez-Lopez, M. / Cruz-Hernandez, E.

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Del Rio-De Santiago, A. / Mendez-Garcia, V. H. / Martinez-Velis, I. / Casallas-Moreno, Y. L. / Lopez-Luna, E. / Yu Gorbatchev, A. / Lopez-Lopez, M. / Cruz-Hernandez, E.

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Document information

Title:

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Contributors:

Del Rio-De Santiago, A. (author) / Mendez-Garcia, V. H. (author) / Martinez-Velis, I. (author) / Casallas-Moreno, Y. L. (author) / Lopez-Luna, E. (author) / Yu Gorbatchev, A. (author) / Lopez-Lopez, M. (author) / Cruz-Hernandez, E. (author)

Published in:

APPLIED SURFACE SCIENCE ; 333 ; 92-95

Publication date:

2015-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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