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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface
Vishwanath, V. (Autor:in) / Demenev, E. (Autor:in) / Giubertoni, D. (Autor:in) / Vanzetti, L. (Autor:in) / Koh, A. L. (Autor:in) / Steinhauser, G. (Autor:in) / Pepponi, G. (Autor:in) / Bersani, M. (Autor:in) / Meirer, F. (Autor:in) / Foad, M. A. (Autor:in)
APPLIED SURFACE SCIENCE ; 355 ; 792-799
01.01.2015
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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