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Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
Egorov, K. V. (Autor:in) / Lebedinskii, Y. Y. (Autor:in) / Markeev, A. M. (Autor:in) / Orlov, O. M. (Autor:in)
APPLIED SURFACE SCIENCE ; 356 ; 454-459
01.01.2015
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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