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Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
Egorov, K.V. (Autor:in) / Lebedinskii, Yu.Yu. (Autor:in) / Markeev, A.M. (Autor:in) / Orlov, O.M. (Autor:in)
Applied surface science ; 356 ; 454-459
01.01.2015
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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