Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100)
Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100)
Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100)
Barrett, C. S. (Autor:in) / Lind, A. G. (Autor:in) / Bao, X. (Autor:in) / Ye, Z. (Autor:in) / Ban, K. Y. (Autor:in) / Martin, P. (Autor:in) / Sanchez, E. (Autor:in) / Xin, Y. (Autor:in) / Jones, K. S. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 51 ; 449-456
01.01.2016
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Thermal Drag of the Antiphase Domain-Boundary Motion
British Library Conference Proceedings | 1998
|Antiphase domain morphologies in Ti3Al-Si alloys
British Library Online Contents | 2003
|TEM Study of Inversion Antiphase Domain Boundaries on GaAs/Si Interphase Grown by MBE
British Library Online Contents | 1993
|Calculation of antiphase boundary energies in intermetallics
British Library Online Contents | 1997
|Antiphase Boundary Migration and Domain Coarsening in Bulk and Thin-Foil Fe-Al Specimens
Springer Verlag | 1988
|