Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
APPLIED SURFACE SCIENCE ; 390 ; 260-265
01.01.2016
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2016
|British Library Online Contents | 2016
|X-ray photoelectron spectroscopic analysis of HfO2/Hf/SiO2/Si structure
British Library Online Contents | 2005
|Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings
British Library Online Contents | 2014
|Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
DOAJ | 2023
|