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Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate
Yan, Kai (Autor:in) / Yao, Wenqing (Autor:in) / Zhao, Yuanyuan (Autor:in) / Yang, Liping (Autor:in) / Cao, Jiangli (Autor:in) / Zhu, Yongfa (Autor:in)
Applied surface science ; 390 ; 260-265
01.01.2016
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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