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Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics
Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics
Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics
Hu, Chih-Chun (Autor:in) / Wu, Cheng-En (Autor:in) / Lin, Hsien-Cheng (Autor:in) / Lee, Kuan-Wei (Autor:in) / Wang, Yeong-Her (Autor:in)
Materials science in semiconductor processing ; 29 ; 272-276
01.01.2015
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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