Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Molina, Joel (Autor:in) / Torres, Reydezel (Autor:in) / Ranjan, Alok (Autor:in) / Pey, Kin-Leong (Autor:in)
Materials science in semiconductor processing ; 66 ; 191-199
01.01.2017
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
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