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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Molina, Joel (author) / Torres, Reydezel (author) / Ranjan, Alok (author) / Pey, Kin-Leong (author)
Materials science in semiconductor processing ; 66 ; 191-199
2017-01-01
9 pages
Article (Journal)
English
DDC:
621.38152
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