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Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application
Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application
Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application
Li, Liuan (Autor:in) / Wang, Wenjing (Autor:in) / He, Liang (Autor:in) / Zhang, Jialin (Autor:in) / Wu, Zhisheng (Autor:in) / Zhang, Baijun (Autor:in) / Liu, Yang (Autor:in)
Materials science in semiconductor processing ; 67 ; 141-146
01.01.2017
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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