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    Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

    New search for: Li, Liuan
    New search for: Wang, Wenjing
    New search for: He, Liang
    New search for: Zhang, Jialin
    New search for: Wu, Zhisheng
    New search for: Zhang, Baijun
    New search for: Liu, Yang

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    Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

    New search for: Li, Liuan
    New search for: Wang, Wenjing
    New search for: He, Liang
    New search for: Zhang, Jialin
    New search for: Wu, Zhisheng
    New search for: Zhang, Baijun
    New search for: Liu, Yang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

    New search for: Li, Liuan
    New search for: Wang, Wenjing
    New search for: He, Liang
    New search for: Zhang, Jialin
    New search for: Wu, Zhisheng
    New search for: Zhang, Baijun
    New search for: Liu, Yang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

    Contributors:

    Li, Liuan (author) / Wang, Wenjing (author) / He, Liang (author) / Zhang, Jialin (author) / Wu, Zhisheng (author) / Zhang, Baijun (author) / Liu, Yang (author)

    Published in:

    Materials science in semiconductor processing ; 67 ; 141-146

    Publication date:

    2017-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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