Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Stoklas, R. / Gregušová, D. / Hasenöhrl, S. et al. | British Library Online Contents | 2018

GaN/AlGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

Shur, M. S. / Khan, M. A. | British Library Online Contents | 1997

Light-Emitting Field-Effect Transistors Having Combined Organic Semiconductor and Metal Oxide Layers

Yamada, K. / Yamao, T. / Hotta, S. | British Library Online Contents | 2013

Performance and design of vertical, ballistic, heterostructure field-effect transistors

Wernersson, L.-E. / Litwin, A. / Samuelson, L. et al. | British Library Online Contents | 1998

Refractive index changes in AlGaN/GaN heterostructure field-effect transistors

Saidi, I. / Bouzaïene, L. / Mejri, H. et al. | British Library Online Contents | 2008