Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment: Fid-Bau Portal

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Gregušová, D. / Gucmann, F. / Kúdela, R. / Mičušík, M. / Stoklas, R. / Válik, L. / Greguš, J. / Blaho, M. / Kordoš, P.

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Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Gregušová, D. / Gucmann, F. / Kúdela, R. / Mičušík, M. / Stoklas, R. / Válik, L. / Greguš, J. / Blaho, M. / Kordoš, P.

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Gregušová, D. / Gucmann, F. / Kúdela, R. / Mičušík, M. / Stoklas, R. / Válik, L. / Greguš, J. / Blaho, M. / Kordoš, P.

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Document information

Title:

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Contributors:

Gregušová, D. (author) / Gucmann, F. (author) / Kúdela, R. (author) / Mičušík, M. (author) / Stoklas, R. (author) / Válik, L. (author) / Greguš, J. (author) / Blaho, M. (author) / Kordoš, P. (author)

Published in:

Applied surface science ; 395 ; 140-144

Publication date:

2017-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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