Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity
Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity
Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity
Jung, Yong Chan (Autor:in) / Seong, Sejong (Autor:in) / Lee, Taehoon (Autor:in) / Kim, Seon Yong (Autor:in) / Park, In-Sung (Autor:in) / Ahn, Jinho (Autor:in)
Applied surface science ; 435 ; 117-121
01.01.2018
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2018
|The improved resistive switching of HfO2:Cu film with multilevel storage
British Library Online Contents | 2015
|Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
British Library Online Contents | 2014
|British Library Online Contents | 2017
|British Library Online Contents | 2018
|