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An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure
An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure
An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure
Negrila, Constantin Catalin (Autor:in) / Lazarescu, Mihail Florin (Autor:in) / Logofatu, Constantin (Autor:in) / Ghita, Rodica V. (Autor:in) / Cotirlan, Costel (Autor:in)
Materials science in semiconductor processing ; 82 ; 62-66
01.01.2018
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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