Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates: Fid-Bau Portal

Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates

Arias-Cerón, J.S. / Vilchis, H. / Hurtado-Castañeda, D.M. / Sánchez-R, V.M.

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Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates

Arias-Cerón, J.S. / Vilchis, H. / Hurtado-Castañeda, D.M. / Sánchez-R, V.M.

Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates

Arias-Cerón, J.S. / Vilchis, H. / Hurtado-Castañeda, D.M. / Sánchez-R, V.M.

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Check availability in my library

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Document information

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Document information

Title:

Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates

Contributors:

Arias-Cerón, J.S. (author) / Vilchis, H. (author) / Hurtado-Castañeda, D.M. (author) / Sánchez-R, V.M. (author)

Published in:

Materials science in semiconductor processing ; 74 ; 98-101

Publication date:

2018-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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