Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon
Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon
Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon
Wang, Peng (Autor:in) / Cui, Can (Autor:in) / Yu, Xuegong (Autor:in) / Yang, Deren (Autor:in)
Materials science in semiconductor processing ; 74 ; 369-374
01.01.2018
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2006
|Oxygen transportation during Czochralski silicon crystal growth
British Library Online Contents | 2000
|Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
British Library Online Contents | 1996
|British Library Online Contents | 2006
|British Library Online Contents | 2003
|