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Molecular dynamics study of the effect of point defects on the stress at the Si/Ge interface
Molecular dynamics study of the effect of point defects on the stress at the Si/Ge interface
Molecular dynamics study of the effect of point defects on the stress at the Si/Ge interface
Chen, Xian (Autor:in) / Zhang, Jing (Autor:in) / Han, Liang (Autor:in) / Tang, Zhaohuan (Autor:in)
Applied surface science ; 456 ; 43-48
01.01.2018
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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